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Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 84, Issue 8, Pages 106–111
(Mi jtf8172)
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This article is cited in 2 scientific papers (total in 2 papers)
Solid-State Electronics
Anisotropic layered high-temperature thermoelectric materials based on the two-phase CrSi$_2$-$\beta$-FeSi$_2$ system
F. Yu. Solomkina, V. K. Zaitseva, S. V. Novikova, A. Yu. Samunina, D. A. Pshenay-Severina, G. N. Isachenkoab a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
The feasibility of synthesizing a wide spectrum of multiphase microstructurally ordered high-temperature thermoelectrics with highly anisotropic thermoelectric parameters is demonstrated with an aluminum-doped CrSi$_2$-$\beta$-FeSi$_2$ system the composition of which varies from Cr$_{0.1}$Fe$_{0.9}$Si$_{(2-x)}$Al$_x$ to Cr$_{0.9}$Fe$_{0.1}$Si$_{(2-x)}$Al$_x$ ($x$ = 0.0 – 0.4). Doping of either phase (CrSi$_2$ and $\beta$-FeSi$_2$) is viewed as a promising way for synthesizing $n$- and $p$-type domains inside the same sample.
Received: 14.11.2013 Accepted: 26.12.2013
Citation:
F. Yu. Solomkin, V. K. Zaitsev, S. V. Novikov, A. Yu. Samunin, D. A. Pshenay-Severin, G. N. Isachenko, “Anisotropic layered high-temperature thermoelectric materials based on the two-phase CrSi$_2$-$\beta$-FeSi$_2$ system”, Zhurnal Tekhnicheskoi Fiziki, 84:8 (2014), 106–111; Tech. Phys., 59:8 (2014), 1209–1214
Linking options:
https://www.mathnet.ru/eng/jtf8172 https://www.mathnet.ru/eng/jtf/v84/i8/p106
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