Deposition of transparent indium tin oxide electrodes by magnetron sputtering of a metallic target on a cold substrate

Indium tin oxide layers with a surface resistance of 50 $\Omega/\Box$ and a transmission in the visible range of up to 100% are obtained by magnetron sputtering of a metallic target on a cold substrate without ion enhancement of deposition and subsequent annealing. It is shown that the above parameters of the layers can be achieved in a wide range of oxygen partial pressures by controlling the deposition rate and in a wide range of deposition rates by controlling the oxygen partial pressure. An unambiguous dependence of the deposition rate on the oxygen partial pressure in the chamber is constructed.