Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 84, Issue 11, Pages 52–57 (Mi jtf8251)  

This article is cited in 2 scientific papers (total in 2 papers)

Solid-State Electronics

Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes

S. A. Karandashova, B. A. Matveeva, V. I. Ratushnyib, M. A. Remennyia, A. Yu. Rybalchenkob, N. M. Stusa

a Ioffe Institute, St. Petersburg
b Volgodonsk Engineering and Technology Institute, Branch of National Research Nuclear University Moscow Engineering Physics Institute
Full-text PDF (534 kB) Citations (2)
Abstract: The I–V characteristics of front-surface-illuminated InAsSb(P) photodiodes are simulated in terms of a simple model that takes into account the radial variation of the lateral resistance of a semiconductor layer on the irradiated side. The applicability of the model for predicting the form of the photocurrent density distribution and its influence on the sensitivity of the photodiodes is demonstrated.
Received: 15.07.2013
Accepted: 21.04.2014
English version:
Technical Physics, 2014, Volume 59, Issue 11, Pages 1631–1635
DOI: https://doi.org/10.1134/S1063784214110115
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Karandashov, B. A. Matveev, V. I. Ratushnyi, M. A. Remennyi, A. Yu. Rybalchenko, N. M. Stus, “Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes”, Zhurnal Tekhnicheskoi Fiziki, 84:11 (2014), 52–57; Tech. Phys., 59:11 (2014), 1631–1635
Citation in format AMSBIB
\Bibitem{KarMatRat14}
\by S.~A.~Karandashov, B.~A.~Matveev, V.~I.~Ratushnyi, M.~A.~Remennyi, A.~Yu.~Rybalchenko, N.~M.~Stus
\paper Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2014
\vol 84
\issue 11
\pages 52--57
\mathnet{http://mi.mathnet.ru/jtf8251}
\elib{https://elibrary.ru/item.asp?id=22019482}
\transl
\jour Tech. Phys.
\yr 2014
\vol 59
\issue 11
\pages 1631--1635
\crossref{https://doi.org/10.1134/S1063784214110115}
Linking options:
  • https://www.mathnet.ru/eng/jtf8251
  • https://www.mathnet.ru/eng/jtf/v84/i11/p52
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025