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This article is cited in 3 scientific papers (total in 3 papers)
Brief Communications
Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy
P. B. Boldyrevskiia, A. G. Korovina, S. A. Denisovb, S. P. Svetlovb, V. G. Shengurovb a National Research Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
The thickness distributions of epitaxial layers over the substrate area are experimentally and theoretically studied for deposition from a molecular beam formed by a sublimation source in vacuum. The calculated data agree well with the experimental results for the molecular-beam epitaxy of silicon.
Received: 20.03.2014
Citation:
P. B. Boldyrevskii, A. G. Korovin, S. A. Denisov, S. P. Svetlov, V. G. Shengurov, “Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 84:11 (2014), 155–158; Tech. Phys., 59:11 (2014), 1732–1735
Linking options:
https://www.mathnet.ru/eng/jtf8269 https://www.mathnet.ru/eng/jtf/v84/i11/p155
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