Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 84, Issue 12, Pages 102–106 (Mi jtf8286)  

This article is cited in 2 scientific papers (total in 2 papers)

Optics

Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction

M. V. Dorokhina, E. I. Malyshevaa, B. N. Zvonkova, A. V. Zdoroveyshcheva, Yu. A. Danilova, D. E. Nikolichevb, A. V. Boryakovb, S. Yu. Zubkovb

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b National Research Lobachevsky State University of Nizhny Novgorod
Full-text PDF (168 kB) Citations (2)
Abstract: Circularly polarized electroluminescence from GaMnAs/$n^{++}$GaAs/$n$-GaAs/InGaAs/$p$-GaAs heterostructures is studied. A hysteresis-like magnetic field dependence of the degree of circular polarization can be attributed to the injection of spin-polarized electrons from the magnetized GaMnAs layer. This effect is observed in the temperature range 10–90 K.
Received: 21.09.2013
Accepted: 08.04.2014
English version:
Technical Physics, 2014, Volume 59, Issue 12, Pages 1839–1843
DOI: https://doi.org/10.1134/S1063784214120056
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Dorokhin, E. I. Malysheva, B. N. Zvonkov, A. V. Zdoroveyshchev, Yu. A. Danilov, D. E. Nikolichev, A. V. Boryakov, S. Yu. Zubkov, “Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction”, Zhurnal Tekhnicheskoi Fiziki, 84:12 (2014), 102–106; Tech. Phys., 59:12 (2014), 1839–1843
Citation in format AMSBIB
\Bibitem{DorMalZvo14}
\by M.~V.~Dorokhin, E.~I.~Malysheva, B.~N.~Zvonkov, A.~V.~Zdoroveyshchev, Yu.~A.~Danilov, D.~E.~Nikolichev, A.~V.~Boryakov, S.~Yu.~Zubkov
\paper Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2014
\vol 84
\issue 12
\pages 102--106
\mathnet{http://mi.mathnet.ru/jtf8286}
\elib{https://elibrary.ru/item.asp?id=22019518}
\transl
\jour Tech. Phys.
\yr 2014
\vol 59
\issue 12
\pages 1839--1843
\crossref{https://doi.org/10.1134/S1063784214120056}
Linking options:
  • https://www.mathnet.ru/eng/jtf8286
  • https://www.mathnet.ru/eng/jtf/v84/i12/p102
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025