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This article is cited in 2 scientific papers (total in 2 papers)
Optics
Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction
M. V. Dorokhina, E. I. Malyshevaa, B. N. Zvonkova, A. V. Zdoroveyshcheva, Yu. A. Danilova, D. E. Nikolichevb, A. V. Boryakovb, S. Yu. Zubkovb a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b National Research Lobachevsky State University of Nizhny Novgorod
Abstract:
Circularly polarized electroluminescence from GaMnAs/$n^{++}$GaAs/$n$-GaAs/InGaAs/$p$-GaAs heterostructures is studied. A hysteresis-like magnetic field dependence of the degree of circular polarization can be attributed to the injection of spin-polarized electrons from the magnetized GaMnAs layer. This effect is observed in the temperature range 10–90 K.
Received: 21.09.2013 Accepted: 08.04.2014
Citation:
M. V. Dorokhin, E. I. Malysheva, B. N. Zvonkov, A. V. Zdoroveyshchev, Yu. A. Danilov, D. E. Nikolichev, A. V. Boryakov, S. Yu. Zubkov, “Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction”, Zhurnal Tekhnicheskoi Fiziki, 84:12 (2014), 102–106; Tech. Phys., 59:12 (2014), 1839–1843
Linking options:
https://www.mathnet.ru/eng/jtf8286 https://www.mathnet.ru/eng/jtf/v84/i12/p102
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