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Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 83, Issue 2, Pages 136–140
(Mi jtf8365)
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This article is cited in 14 scientific papers (total in 14 papers)
Brief Communications
Optical properties of porous silicon processed in tetraethyl orthosilicate
A. S. Len'shin, V. M. Kashkarov, V. N. Tsipenyuk, P. V. Seredin, B. L. Agapov, D. A. Minakov, È. P. Domashevskaya Voronezh State University
Abstract:
We investigate the change in the composition and optical properties of porous silicon (por-Si) obtained by electrochemical etching of a palate made of $n$-type (111) silicon single crystal under high-temperature annealing and processing in tetraethyl orthosilicate (TEOS). It is shown that TEOS processing and annealing prevent contamination of a sample stored for a long time in atmosphere. The processing of por-Si in TEOS does not change the position of the photoluminescence (PL) peak and suppresses PL to a smaller extent as compared to annealing of por-Si. This increases the reliability of optoelectronic devices based on por-Si.
Received: 25.04.2012
Citation:
A. S. Len'shin, V. M. Kashkarov, V. N. Tsipenyuk, P. V. Seredin, B. L. Agapov, D. A. Minakov, È. P. Domashevskaya, “Optical properties of porous silicon processed in tetraethyl orthosilicate”, Zhurnal Tekhnicheskoi Fiziki, 83:2 (2013), 136–140; Tech. Phys., 58:2 (2013), 284–288
Linking options:
https://www.mathnet.ru/eng/jtf8365 https://www.mathnet.ru/eng/jtf/v83/i2/p136
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