Updating of the toroidal electron spectrometer intended for a scanning electron microscope and its new applications in diagnostics of micro- and nanoelectronic structures

A new version of the toroidal electron spectrometer installed in a scanning electron microscope is described. The new instrument has made it possible to carry out fundamental and applied research in the field of local nondestructive inspection of micro- and nanoelectronic materials and devices. The topology control of 3D microstructures by backscattered electron tomography is exemplified. A high efficiency of secondary electron energy filtering in monitoring of semiconductor regions locally doped by $p$- and $n$-type impurities is demonstrated. A physical substantiation for the high contrast of the doped regions is given. The feasibility of taking electron spectra using a scanning electron microscope in a wide range from slow secondary electrons to elastically scattered ones is proved.