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Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 83, Issue 4, Pages 92–98
(Mi jtf8409)
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This article is cited in 2 scientific papers (total in 2 papers)
Physics of nanostructures
Nanomorphological characteristics of the single-crystal Si(100) surface subjected to microwave plasma processing at weak adsorption
V. Ya. Shanygin, R. K. Yafarov Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
Abstract:
The influence of the conditions and composition of the highly ionized plasma of an electron cyclotron resonance low-pressure microwave gas discharge on the nanomorphology of the single-crystal Si(100) surface is studied. Model mechanisms of the processes controlling the main nanomorphological parameters of silicon crystals subjected to low-energy microwave plasma processing in chemically active and inactive gaseous media under the conditions of weak adsorption are considered.
Received: 02.03.2012 Accepted: 20.07.2012
Citation:
V. Ya. Shanygin, R. K. Yafarov, “Nanomorphological characteristics of the single-crystal Si(100) surface subjected to microwave plasma processing at weak adsorption”, Zhurnal Tekhnicheskoi Fiziki, 83:4 (2013), 92–98; Tech. Phys., 58:4 (2013), 557–562
Linking options:
https://www.mathnet.ru/eng/jtf8409 https://www.mathnet.ru/eng/jtf/v83/i4/p92
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