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Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 83, Issue 5, Pages 69–72 (Mi jtf8432)  

This article is cited in 1 scientific paper (total in 1 paper)

Solids

Effect of pressure on the atomic and electronic structure of enstatite MgSiO$_3$: Ab initio calculations

A. N. Chibisov

Computer Centre of Far Eastern Branch RAS, Khabarovsk
Full-text PDF (362 kB) Citations (1)
Abstract: Simulation results for the effect of pressure on the atomic and electronic structure of MgSiO$_3$ are presented. They are in good agreement with experimental data. It is shown that, when the pressure rises from 0 to 2 GPa, the bandgap increases from 4.67 to 4.74 eV because of the electron charge redistribution between atoms in the enstatite structure.
Received: 21.05.2012
English version:
Technical Physics, 2013, Volume 58, Issue 5, Pages 692–695
DOI: https://doi.org/10.1134/S106378421305006X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. N. Chibisov, “Effect of pressure on the atomic and electronic structure of enstatite MgSiO$_3$: Ab initio calculations”, Zhurnal Tekhnicheskoi Fiziki, 83:5 (2013), 69–72; Tech. Phys., 58:5 (2013), 692–695
Citation in format AMSBIB
\Bibitem{Chi13}
\by A.~N.~Chibisov
\paper Effect of pressure on the atomic and electronic structure of enstatite MgSiO$_3$: Ab initio calculations
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2013
\vol 83
\issue 5
\pages 69--72
\mathnet{http://mi.mathnet.ru/jtf8432}
\elib{https://elibrary.ru/item.asp?id=20325880}
\transl
\jour Tech. Phys.
\yr 2013
\vol 58
\issue 5
\pages 692--695
\crossref{https://doi.org/10.1134/S106378421305006X}
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  • https://www.mathnet.ru/eng/jtf/v83/i5/p69
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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