Sputtering of the target surface by Cs$^+$ ions: Steady-state concentration of implanted cesium and emission of CsM$^+$ cluster ions

Experimental data for the variation of the work function on the Si and GaAs semiconductor surfaces irradiated by cesium ions are presented. The formation mechanism of CsM$^+$ cluster ions (M is the analyte) is considered. Ionization potentials for some CsM molecules are calculated, and a simple experimental technique to determine the concentration of cesium penetrating into the subsurface region of various materials during cesium ion sputtering is suggested. This technique uses a preimplanted potassium as an “internal standard”.