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Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 83, Issue 6, Pages 66–70 (Mi jtf8458)  
This article is cited in 17 scientific papers (total in 17 papers)

Physical electronics

Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF$_2$ surface layers using low-energy ion implantation

B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov, Kh. Kh. Boltaev

Tashkent State Technical University named after Islam Karimov
Full-text PDF (1098 kB) Citations (17)
Abstract: A review of the experimental results on the study of the Si, GaAs, and CaF$_2$ surface layers that are created using the low-energy ion implantation is presented. Optical and electron spectroscopy and microscopy are employed in the experiments.
Received: 31.10.2012
English version:
Technical Physics, 2013, Volume 58, Issue 6
DOI: https://doi.org/10.1134/S1063784213060261
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov, Kh. Kh. Boltaev, “Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF$_2$ surface layers using low-energy ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 83:6 (2013), 66–70
Citation in format AMSBIB
\Bibitem{UmiTasMur13}
\by B.~E.~Umirzakov, D.~A.~Tashmukhamedova, D.~M.~Muradkabilov, Kh.~Kh.~Boltaev
\paper Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF$_2$ surface layers using low-energy ion implantation
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2013
\vol 83
\issue 6
\pages 66--70
\mathnet{http://mi.mathnet.ru/jtf8458}
\elib{https://elibrary.ru/item.asp?id=20325906}
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    • This publication is cited in the following 17 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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