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Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 83, Issue 9, Pages 146–149 (Mi jtf8548)  
This article is cited in 15 scientific papers (total in 15 papers)

Brief Communications

Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzibaeva, A. K. Tashatov, S. B. Donaev, B. B. Mavlyanov

Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent
Full-text PDF (166 kB) Citations (15)
Abstract: The energy band diagram of multilayer nanofilm systems formed on the basis of Si, GaAs, and CaF$_2$ is constructed. The optimal regimes of obtaining homogeneous films of a complex composition are determined
Received: 23.05.2012
Accepted: 29.01.2013
English version:
Technical Physics, 2013, Volume 58, Issue 9, Pages 1383–1386
DOI: https://doi.org/10.1134/S1063784213090260
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzibaeva, A. K. Tashatov, S. B. Donaev, B. B. Mavlyanov, “Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods”, Zhurnal Tekhnicheskoi Fiziki, 83:9 (2013), 146–149; Tech. Phys., 58:9 (2013), 1383–1386
Citation in format AMSBIB
\Bibitem{UmiTasRuz13}
\by B.~E.~Umirzakov, D.~A.~Tashmukhamedova, M.~K.~Ruzibaeva, A.~K.~Tashatov, S.~B.~Donaev, B.~B.~Mavlyanov
\paper Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2013
\vol 83
\issue 9
\pages 146--149
\mathnet{http://mi.mathnet.ru/jtf8548}
\elib{https://elibrary.ru/item.asp?id=20325996}
\transl
\jour Tech. Phys.
\yr 2013
\vol 58
\issue 9
\pages 1383--1386
\crossref{https://doi.org/10.1134/S1063784213090260}
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    • This publication is cited in the following 15 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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