High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy

The spectra of the high-temperature (up to 300 K) photoluminescence of the heteroepitaxial structures based on the CdHgTe solid solutions that are grown using molecular-beam epitaxy and emit at room temperature in the wavelength interval $\lambda$ = 1.5–4.3 $\mu$m are analyzed. It is demonstrated that the observed photoluminescence of the CdHgTe narrow-gap semiconductor at high temperatures and the specific features of the high-temperature spectra can be interpreted using the disorder of the solid solution as in the case of the solid solutions of the group-III nitrides.