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This article is cited in 18 scientific papers (total in 18 papers)
Physical science of materials
Single-layer graphene oxide films on a silicon surface
A. E. Aleksenskii, P. N. Brunkov, A. T. Dideikin, D. A. Kirilenko, Yu. V. Kudashova, D. A. Sakseev, V. A. Sevryuk, M. S. Shestakov Ioffe Institute, St. Petersburg
Abstract:
A method is proposed to produce large-area single-layer graphene oxide films on the surface of semiconductor silicon wafers by precipitation from aqueous suspensions. Graphene oxide is synthesized from natural crystalline graphite during chemical oxidation and represents a wide-gap insulator. Single-layer graphene with a homogeneous-fragment size up to 50 $\mu$m can be formed by the reduction of graphene oxide films, and this size is significantly larger than those achieved to date.
Received: 19.02.2013
Citation:
A. E. Aleksenskii, P. N. Brunkov, A. T. Dideikin, D. A. Kirilenko, Yu. V. Kudashova, D. A. Sakseev, V. A. Sevryuk, M. S. Shestakov, “Single-layer graphene oxide films on a silicon surface”, Zhurnal Tekhnicheskoi Fiziki, 83:11 (2013), 67–71; Tech. Phys., 58:11 (2013), 1614–1618
Linking options:
https://www.mathnet.ru/eng/jtf8615 https://www.mathnet.ru/eng/jtf/v83/i11/p67
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