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This article is cited in 4 scientific papers (total in 4 papers)
Solid-State Electronics
Simulation of daytime variations in the characteristics of $a$-Si:H solar cells
Yu. V. Kryuchenkoa, A. V. Sachenkoa, A. V. Bobyl'b, V. P. Kostylyova, I. O. Sokolovskyia, E. I. Terukovbc, V. N. Verbitskiib, Yu. A. Nikolaevbc a Institute of Semiconductor Physics NAS, Kiev
b Ioffe Institute, St. Petersburg
c R&D Center TFTE, St.-Petersburg
Abstract:
The time dependences of the key characteristic of $a$-Si:H solar cells over daylight hours are theoretically simulated. The model is used to calculate the time dependences for an arbitrary geographic latitude in the interval 30$^\circ$–60$^\circ$ and arbitrary day of the year. The calculated results are illustrated for a geographic latitude of 45$^\circ$ and equinox. The relative variations in the characteristics of the $a$-Si:H solar cells are valid with a relatively high accuracy for the solar cells based on alternative semiconductors provided that their efficiency ranges form 7 to 20%.
Received: 05.12.2012
Citation:
Yu. V. Kryuchenko, A. V. Sachenko, A. V. Bobyl', V. P. Kostylyov, I. O. Sokolovskyi, E. I. Terukov, V. N. Verbitskii, Yu. A. Nikolaev, “Simulation of daytime variations in the characteristics of $a$-Si:H solar cells”, Zhurnal Tekhnicheskoi Fiziki, 83:11 (2013), 78–85; Tech. Phys., 58:11 (2013), 1625–1631
Linking options:
https://www.mathnet.ru/eng/jtf8617 https://www.mathnet.ru/eng/jtf/v83/i11/p78
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