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Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 82, Issue 2, Pages 150–152
(Mi jtf8767)
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This article is cited in 17 scientific papers (total in 17 papers)
Brief Communications
Influence of natural aging on photoluminescence from porous silicon
A. S. Len'shin, V. M. Kashkarov, S. Yu. Turishchev, M. S. Smirnov, È. P. Domashevskaya Voronezh State University
Abstract:
The influence of natural aging on the photoluminescence intensity and the position of a photolu-minescence peak in $n$-type por-Si (por-Si) is studied. The variation of the phase composition and the relative content of the amorphous and oxide phases of silicon in por-Si during aging is determined by fitting simulated spectra to experimental ultrasoft Si $L_{2,3}$ X-ray emission spectra using reference spectra.
Received: 01.02.2011
Citation:
A. S. Len'shin, V. M. Kashkarov, S. Yu. Turishchev, M. S. Smirnov, È. P. Domashevskaya, “Influence of natural aging on photoluminescence from porous silicon”, Zhurnal Tekhnicheskoi Fiziki, 82:2 (2012), 150–152; Tech. Phys., 57:2 (2012), 305–307
Linking options:
https://www.mathnet.ru/eng/jtf8767 https://www.mathnet.ru/eng/jtf/v82/i2/p150
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