Enhancement of the electron-stimulated desorption from amorphous aluminum oxide films on silicon during an increase in the substrate temperatur

The effect of high-temperature electron-stimulated desorption (ESD) from 20-nm-thick Al$_2$O$_3$ films deposited onto silicon wafers is studied. The ESD effect is found to be significantly enhanced upon heating. The films are found to decompose during ion beam irradiation of a heated substrate resulting in pure Al appearance. This process is accompanied by the formation of islands and almost pure silicon surface regions at a certain critical irradiation dose. Outside the irradiation zone, a 20-nm-thick Al$_2$O$_3$ film remains continuous even upon heating to 700$^\circ$C and holding for 90 min. The effect of the primary electron beam energy on ESD from a 20-nm-thick Al$_2$O$_3$ film on silicon is investigated, and the parameters at which ESD takes place or absent are determined.