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Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 82, Issue 8, Pages 114–118 (Mi jtf8905)  

This article is cited in 1 scientific paper (total in 1 paper)

Surfaces, Electron and Ion Emission

Van der Waals surface of InSe as a nanorelief standard in metrology of nano-objects

A. I. Dmitriev

Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Kiev
Full-text PDF (291 kB) Citations (1)
Abstract: Rapid progress of nanotechnology requires metrological provision systems and, first of all, a standard of length in the nanometer range including a surface nanorelief standard. One such standard is the periodical arrangement of atoms in the lattice of single crystals. The cleavage surface of layered crystals is very suitable in this respect. The cleavage surface of an InSe layered semiconductor is a van der Waals surface. It features a high chemical stability and a low roughness, is easy to obtain by cleavage, and has extended atomically smooth areas of a highly ordered rhombohedral lattice with unit cell parameter $a$ = 0.4003 nm. Therefore, this surface, like the surface of highly oriented pyrographite, can be used as a nanorelief standard.
Received: 26.07.2011
Accepted: 29.11.2011
English version:
Technical Physics, 2012, Volume 57, Issue 8, Pages 1157–1161
DOI: https://doi.org/10.1134/S1063784212080087
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Dmitriev, “Van der Waals surface of InSe as a nanorelief standard in metrology of nano-objects”, Zhurnal Tekhnicheskoi Fiziki, 82:8 (2012), 114–118; Tech. Phys., 57:8 (2012), 1157–1161
Citation in format AMSBIB
\Bibitem{Dmi12}
\by A.~I.~Dmitriev
\paper Van der Waals surface of InSe as a nanorelief standard in metrology of nano-objects
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 82
\issue 8
\pages 114--118
\mathnet{http://mi.mathnet.ru/jtf8905}
\elib{https://elibrary.ru/item.asp?id=20325663}
\transl
\jour Tech. Phys.
\yr 2012
\vol 57
\issue 8
\pages 1157--1161
\crossref{https://doi.org/10.1134/S1063784212080087}
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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