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Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 82, Issue 9, Pages 44–48
(Mi jtf8918)
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This article is cited in 8 scientific papers (total in 8 papers)
Optics, Quantum Electronics
Quick ellipsometric technique for determining the thicknesses and optical constant profiles of Fe/SiO$_2$/Si(100) nanostructures during growth
I. A. Tarasovab, N. N. Kosyrevab, S. N. Varnakovab, S. G. Ovchinnikova, S. M. Zharkovac, V. A. Shvetsde, S. G. Bondarenkoa, O. E. Tereshchenkod a L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
b M. F. Reshetnev Siberian State Aerospace University,
c Siberian Federal University, Krasnoyarsk
d Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
e Novosibirsk State University
Abstract:
An algorithm is developed to perform rapid control of the thickness and optical constants of a film structure during growth. This algorithm is tested on Fe/SiO$_2$/Si(100) structures grown in an Angara molecular-beam epitaxy setup. The film thicknesses determined during their growth are compared with X-ray spectral fluorescence analysis and transmission electron microscopy data.
Received: 04.10.2011
Citation:
I. A. Tarasov, N. N. Kosyrev, S. N. Varnakov, S. G. Ovchinnikov, S. M. Zharkov, V. A. Shvets, S. G. Bondarenko, O. E. Tereshchenko, “Quick ellipsometric technique for determining the thicknesses and optical constant profiles of Fe/SiO$_2$/Si(100) nanostructures during growth”, Zhurnal Tekhnicheskoi Fiziki, 82:9 (2012), 44–48; Tech. Phys., 57:9 (2012), 1225–1229
Linking options:
https://www.mathnet.ru/eng/jtf8918 https://www.mathnet.ru/eng/jtf/v82/i9/p44
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