Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 82, Issue 12, Pages 63–66 (Mi jtf8994)  
This article is cited in 3 scientific papers (total in 3 papers)

Solid-State Electronics

Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix

S. N. Nagornyhab, V. I. Pavlenkovac, A. N. Mikhaylova, A. I. Belova, L. V. Krasil’nikovaad, D. I. Kryzhkovd, D. I. Tetelbauma

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Minin State Pedagogical University of Nizhny Novgorod
c Arzamas State Pedagogical Institute
d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (477 kB) Citations (3)
Abstract: A four-level model of photoluminescence from $\mathrm{Si}$ nanocrystal arrays embedded in a $\mathrm{SiO}_2$ matrix is suggested. The model allows for thermally activated transitions between singlet and triplet levels in the exchange-split energy state of an exciton in an excited silicon nanocrystal. An expression is derived for the temperature dependence of the intensity of photoluminescence monochromatic components. A correlation is found between the amount of splitting and the emitted photon energy by comparing model data with our experimental data for ion-synthesized $\mathrm{Si}$ nanocrystals in a $\mathrm{SiO}_2$ matrix. The model explains the finiteness of the photoluminescence intensity at temperatures close to $0$ K and the nonmonotonicity of the temperature run of the intensity.
Received: 31.01.2012
English version:
Technical Physics, 2012, Volume 57, Issue 12, Pages 1672–1675
DOI: https://doi.org/10.1134/S1063784212120213
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. N. Nagornyh, V. I. Pavlenkov, A. N. Mikhaylov, A. I. Belov, L. V. Krasil’nikova, D. I. Kryzhkov, D. I. Tetelbaum, “Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix”, Zhurnal Tekhnicheskoi Fiziki, 82:12 (2012), 63–66; Tech. Phys., 57:12 (2012), 1672–1675
Citation in format AMSBIB
\Bibitem{NagPavMik12}
\by S.~N.~Nagornyh, V.~I.~Pavlenkov, A.~N.~Mikhaylov, A.~I.~Belov, L.~V.~Krasil’nikova, D.~I.~Kryzhkov, D.~I.~Tetelbaum
\paper Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 82
\issue 12
\pages 63--66
\mathnet{http://mi.mathnet.ru/jtf8994}
\elib{https://elibrary.ru/item.asp?id=20325752}
\transl
\jour Tech. Phys.
\yr 2012
\vol 57
\issue 12
\pages 1672--1675
\crossref{https://doi.org/10.1134/S1063784212120213}
Linking options:
  • https://www.mathnet.ru/eng/jtf8994
  • https://www.mathnet.ru/eng/jtf/v82/i12/p63
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025