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Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 81, Issue 2, Pages 141–143
(Mi jtf9060)
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This article is cited in 5 scientific papers (total in 5 papers)
Brief Communications
Conductivity of semiconductor diodes with simultaneously applied direct and alternating biases
K. M. Aliev, I. K. Kamilov, Kh. O. Ibragimov, N. S. Abakarova Daghestan Institute of Physics after Amirkhanov
Abstract:
The influence of a high-amplitude high-frequency signal on the static current-voltage characteristics of commercial semiconductor $p$–$n$ junction diodes is studied experimentally. $S$-shaped regions are observed in the direct branches of the current-voltage characteristics over a wide frequency range, and a bell-shaped segment is seen in the reverse branches. The value and position of the latter on the voltage axis considerably depend on the alternating signal frequency.
Received: 27.04.2010 Accepted: 21.07.2010
Citation:
K. M. Aliev, I. K. Kamilov, Kh. O. Ibragimov, N. S. Abakarova, “Conductivity of semiconductor diodes with simultaneously applied direct and alternating biases”, Zhurnal Tekhnicheskoi Fiziki, 81:2 (2011), 141–143; Tech. Phys., 56:2 (2011), 298–300
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https://www.mathnet.ru/eng/jtf9060 https://www.mathnet.ru/eng/jtf/v81/i2/p141
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