Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 81, Issue 4, Pages 117–120 (Mi jtf9103)  

This article is cited in 17 scientific papers (total in 17 papers)

Electron and Ion Beams, Accelerators

Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

Z. A. Isakhanov, Z. È. Ìuhtarov, B. E. Umirzakov, M. K. Ruzibaeva

Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, Akademgorodok, Tashkent, 100125, Uzbekistan
Abstract: The type, energy, ion dose, and heating temperature required to ensure a stable minimum work function of a surface in one experimental cycle (at least 2–3 min) are determined. Secondary ion mass spectrograms are recorded using Cs$^+$, Ba$^+$, and Ar$^+$ ions. Cu, Al, and Mo samples are studied. The optimum ion implantation conditions and the activation temperature that provide a stable minimum work function of the sample surfaces are found. The samples implanted by Ba$^+$ ions withstand higher temperature and current loads than the samples implanted by Cs$^+$ ions. However, the work function in the case of Cs$^+$ ions decreases stronger (to 1.9 eV). It is shown that neutral sputtered particles do not leave the surface at $e\varphi\le$ 1.85–1.90 eV.
Received: 26.07.2010
English version:
Technical Physics, 2011, Volume 56, Issue 4, Pages 546–549
DOI: https://doi.org/10.1134/S1063784211040177
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Z. A. Isakhanov, Z. È. Ìuhtarov, B. E. Umirzakov, M. K. Ruzibaeva, “Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission”, Zhurnal Tekhnicheskoi Fiziki, 81:4 (2011), 117–120; Tech. Phys., 56:4 (2011), 546–549
Citation in format AMSBIB
\Bibitem{IsaìuhUmi11}
\by Z.~A.~Isakhanov, Z.~\`E.~Ìuhtarov, B.~E.~Umirzakov, M.~K.~Ruzibaeva
\paper Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2011
\vol 81
\issue 4
\pages 117--120
\mathnet{http://mi.mathnet.ru/jtf9103}
\elib{https://elibrary.ru/item.asp?id=20324889}
\transl
\jour Tech. Phys.
\yr 2011
\vol 56
\issue 4
\pages 546--549
\crossref{https://doi.org/10.1134/S1063784211040177}
Linking options:
  • https://www.mathnet.ru/eng/jtf9103
  • https://www.mathnet.ru/eng/jtf/v81/i4/p117
  • This publication is cited in the following 17 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025