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Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 81, Issue 4, Pages 138–140
(Mi jtf9109)
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This article is cited in 3 scientific papers (total in 3 papers)
Brief Communications
Simulation of the atomic and electronic structures of mesoporous SiO$_2$ containing Ti$^{4+}$ and Zr$^{4+}$ ions
A. N. Chibisova, M. A. Chibisovab a Institute of Geology and Nature Management, Far-Eastern Branch, Russian Academy of Sciences, Blagoveshchensk
b Amur State University, Blagoveshchensk, Amur region
Abstract:
The influence of Ti and Zr impurity atoms on the atomic and electronic structures of a mesoporous SiO$_2$ matrix is ab initio simulated in a generalized gradient approximation. Energetically favorable positions of titanium and zirconium in the structure are revealed. The incorporation of Zr and Ti ions is shown to decrease the bandgap.
Received: 17.04.2010
Citation:
A. N. Chibisov, M. A. Chibisova, “Simulation of the atomic and electronic structures of mesoporous SiO$_2$ containing Ti$^{4+}$ and Zr$^{4+}$ ions”, Zhurnal Tekhnicheskoi Fiziki, 81:4 (2011), 138–140; Tech. Phys., 56:4 (2011), 567–569
Linking options:
https://www.mathnet.ru/eng/jtf9109 https://www.mathnet.ru/eng/jtf/v81/i4/p138
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