|
|
Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 81, Issue 5, Pages 69–74
(Mi jtf9127)
|
|
|
|
This article is cited in 7 scientific papers (total in 7 papers)
Solid-State Electronics
New opportunities for quantitative analysis as applied to reflected electron energy loss spectroscopy of Fe/Si structures
A. S. Parshinab, S. A. Kushchenkova, G. A. Alexandrovaa, S. G. Ovchinnikovb a M. F. Reshetnev Siberian State Aerospace University,
b L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
Abstract:
The feasibility of determining the elemental composition, chemical state, and element distribution across the depth in a subsurface region using the computer simulation of the electron inelastic scattering cross section is demonstrated with iron layers on silicon substrates. Analysis is carried out based on the dielectric theory and on the experimental determination of the product of the electron inelastic mean free path by the inelastic scattering cross section from reflected electron energy loss spectra.
Received: 24.06.2010 Accepted: 13.10.2010
Citation:
A. S. Parshin, S. A. Kushchenkov, G. A. Alexandrova, S. G. Ovchinnikov, “New opportunities for quantitative analysis as applied to reflected electron energy loss spectroscopy of Fe/Si structures”, Zhurnal Tekhnicheskoi Fiziki, 81:5 (2011), 69–74; Tech. Phys., 56:5 (2011), 656–661
Linking options:
https://www.mathnet.ru/eng/jtf9127 https://www.mathnet.ru/eng/jtf/v81/i5/p69
|
|