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Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 81, Issue 7, Pages 105–110 (Mi jtf9188)  
Optics, Quantum Electronics

Interaction of optical radiation with controlled concentration and static dielectric inhomogeneity in narrow-band semiconductors

V. V. Antonova, V. A. Kuznetcovb

a Yuri Gagarin State Technical University of Saratov
b Saratov State Agrarian University named after N. I. Vavilov
Full-text PDF (201 kB)
Abstract: It is shown that a controlled concentration inhomogeneity causing a deviation of a laser beam incident on it can be produced in some semiconductors. In indium antimonide, this effect appears in the case of temperature-electric instability in a magnetic field. In a GaAs-GaP-based compound, this effect occurs due to the inbuilt gradient of static dielectric permittivity and electron flow grouping. These effects make it possible to construct a deflector of infrared radiation.
Received: 12.07.2010
English version:
Technical Physics, 2011, Volume 56, Issue 7, Pages 1003–1008
DOI: https://doi.org/10.1134/S1063784211070024
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Antonov, V. A. Kuznetcov, “Interaction of optical radiation with controlled concentration and static dielectric inhomogeneity in narrow-band semiconductors”, Zhurnal Tekhnicheskoi Fiziki, 81:7 (2011), 105–110; Tech. Phys., 56:7 (2011), 1003–1008
Citation in format AMSBIB
\Bibitem{AntKuz11}
\by V.~V.~Antonov, V.~A.~Kuznetcov
\paper Interaction of optical radiation with controlled concentration and static dielectric inhomogeneity in narrow-band semiconductors
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2011
\vol 81
\issue 7
\pages 105--110
\mathnet{http://mi.mathnet.ru/jtf9188}
\elib{https://elibrary.ru/item.asp?id=20325106}
\transl
\jour Tech. Phys.
\yr 2011
\vol 56
\issue 7
\pages 1003--1008
\crossref{https://doi.org/10.1134/S1063784211070024}
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