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Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 81, Issue 7, Pages 149–151
(Mi jtf9195)
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This article is cited in 3 scientific papers (total in 3 papers)
Brief Communications
Anomalous characteristics of lasers with a large number of quantum wells
A. A. Biryukova, S. M. Nekorkina, M. N. Kolesnikova, T. S. Babushkinaa, V. Ya. Aleshkinb, A. A. Dubinovb a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
Semiconductor lasers with an active region containing six quantum wells are investigated experimentally. The temperature dependences of working characteristics (threshold current density, external differential quantum efficiency, and directional pattern) are analyzed. Anomalous behavior of the temperature dependence of the threshold current and external differential quantum efficiency, associated with a negative characteristic temperature and a decrease in the quantum efficiency of radiation upon a decrease in temperature, is detected. A narrowing of the directional patterns in the plane perpendicular to the $p$–$n$ junction upon an increase in temperature is revealed.
Received: 28.07.2010
Citation:
A. A. Biryukov, S. M. Nekorkin, M. N. Kolesnikov, T. S. Babushkina, V. Ya. Aleshkin, A. A. Dubinov, “Anomalous characteristics of lasers with a large number of quantum wells”, Zhurnal Tekhnicheskoi Fiziki, 81:7 (2011), 149–151; Tech. Phys., 56:7 (2011), 1049–1052
Linking options:
https://www.mathnet.ru/eng/jtf9195 https://www.mathnet.ru/eng/jtf/v81/i7/p149
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