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Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 81, Issue 9, Pages 113–118
(Mi jtf9241)
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This article is cited in 2 scientific papers (total in 2 papers)
Surfaces, Electron and Ion Emission
New technique for heterogeneous vapor-phase synthesis of nanostructured metal layers from low-dimensional volatile metal complexes
A. M. Badalyana, L. F. Bakhturova, V. V. Kaichevb, O. V. Polyakova, O. P. Pchelyakovc, G. I. Smirnovc a Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
b Boreskov Institute of Catalysis SB RAS, Novosibirsk
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
A new technique for depositing thin nanostructured layers on semiconductor and insulating substrates that is based on heterogeneous gas-phase synthesis from low-dimensional volatile metal complexes is suggested and tried out. Thin nanostructured copper layers are deposited on silicon and quartz substrates from low-dimensional formate complexes using a combined synthesis-mass transport process. It is found that copper in layers thus deposited is largely in a metal state (Cu$^0$) and has the form of closely packed nanograins with a characteristic structure.
Received: 29.11.2010
Citation:
A. M. Badalyan, L. F. Bakhturova, V. V. Kaichev, O. V. Polyakov, O. P. Pchelyakov, G. I. Smirnov, “New technique for heterogeneous vapor-phase synthesis of nanostructured metal layers from low-dimensional volatile metal complexes”, Zhurnal Tekhnicheskoi Fiziki, 81:9 (2011), 113–118; Tech. Phys., 56:9 (2011), 1333–1338
Linking options:
https://www.mathnet.ru/eng/jtf9241 https://www.mathnet.ru/eng/jtf/v81/i9/p113
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