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This article is cited in 10 scientific papers (total in 10 papers)
Surfaces, Electron and Ion Emission
Growth of Fe$_3$O$_4$ films on the Si(111) surface covered by a thin SiO$_2$ layer
V. V. Balashevab, V. V. Korobtsovab, T. A. Pisarenkoab, L. A. Chebotkevichb a Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
b Institute of Physics and Information Technologies, Far Eastern Federal University, Vladivostok
Abstract:
Magnetite polycrystalline films are grown by variously oxidizing a Fe film on the Si(111) surface covered by a thin (1.5 nm) SiO$_2$ layer. It is found that defects in the SiO$_2$ layer influence silicidation under heating of the Fe film. The high-temperature oxidation of the Fe film results in the formation of both Fe$_3$O$_4$ and iron monosilicide. However, the high-temperature deposition of Fe in an oxygen atmosphere leads to the growth of a compositionally uniform Fe$_3$O$_4$ film on the SiO$_2$ surface. It is found that such a synthesis method causes [311] texture to arise in the magnetite film, with the texture axis normal to the surface. The influence of the synthesis method on the magnetic properties of grown Fe$_3$O$_4$ films is studied. A high coercive force of Fe$_3$O$_4$ films grown by Fe film oxidation is related to their specific morphology and compositional nonuniformity.
Received: 11.01.2011
Citation:
V. V. Balashev, V. V. Korobtsov, T. A. Pisarenko, L. A. Chebotkevich, “Growth of Fe$_3$O$_4$ films on the Si(111) surface covered by a thin SiO$_2$ layer”, Zhurnal Tekhnicheskoi Fiziki, 81:10 (2011), 122–128; Tech. Phys., 56:10 (2011), 1501–1507
Linking options:
https://www.mathnet.ru/eng/jtf9266 https://www.mathnet.ru/eng/jtf/v81/i10/p122
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