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This article is cited in 3 scientific papers (total in 3 papers)
Surfaces, Electron and Ion Emission
Properties of low-refractive-index films obtained by the close-spaced vapor transport technique under the sublimation of graphite in a quasi-closed volume
N. V. Sopinskii, V. S. Khomchenko, O. S. Litvin, A. K. Savin, N. A. Semenenko, A. A. Evtukh, V. P. Sobolevskii, G. P. Olkhovik Institute of Semiconductor Physics NAS, Kiev
Abstract:
The properties of low-refractive-index carbon films obtained by close-spaced vapor transport at graphite sublimation are studied. The optical properties of the films are investigated by monochromatic multiple-angle ellipsometry, and their morphology is examined by AFM. It is found that the films have a columnar structure with a background surface roughness of about 1 nm. In addition, the surface of the film contains islands up to 50 nm in height with a footprint of $\approx$ 200 nm. A low-refractive-index carbon film deposited by close-spaced vapor transport on silicon tips is found to decrease the field emission threshold and drastically raise the current.
Received: 28.02.2011
Citation:
N. V. Sopinskii, V. S. Khomchenko, O. S. Litvin, A. K. Savin, N. A. Semenenko, A. A. Evtukh, V. P. Sobolevskii, G. P. Olkhovik, “Properties of low-refractive-index films obtained by the close-spaced vapor transport technique under the sublimation of graphite in a quasi-closed volume”, Zhurnal Tekhnicheskoi Fiziki, 81:11 (2011), 125–129; Tech. Phys., 56:11 (2011), 1665–1669
Linking options:
https://www.mathnet.ru/eng/jtf9293 https://www.mathnet.ru/eng/jtf/v81/i11/p125
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