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Mendeleev Communications, 2019, Volume 29, Issue 2, Pages 218–219
DOI: https://doi.org/10.1016/j.mencom.2019.03.035
(Mi mendc1477)
 

This article is cited in 26 scientific papers (total in 26 papers)

Communications

Hole mobility in thieno[3,2-b]thiophene oligomers

V. V. Malova, T. Ghoshbc, V. C. Nairbc, M. M. Maslovd, K. P. Katind, K. N. Unnibc, A. R. Tameeva

a A.N. Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences, Moscow, Russian Federation
b Academy of Scientific and Innovative Research (AcSIR), Thiruvananthapuram, India
c Photosciences and Photonics Section, CSIR-National Institute for Interdisciplinary Science and Technology (NIIST), Thiruvananthapuram, India
d National Research Nuclear University MEPhI, Moscow, Russian Federation
Abstract: A study of transient and steady state electrical currents in the solution-processed thin films of thieno[3,2-b]thiophene oligomers has demonstrated charge carrier mobility of about 10−2cm2V−1s−1. Thieno[3,2-b]thiophene moieties serve as reasonable charge transport sites providing the high mobility. Varying end alkyl chains in such oligomers is suggested as a viable tool to tune the mobility.
Bibliographic databases:
Document Type: Article
Language: English
Supplementary materials:
Supplementary_data_1.pdf (407.9 Kb)


Citation: V. V. Malov, T. Ghosh, V. C. Nair, M. M. Maslov, K. P. Katin, K. N. Unni, A. R. Tameev, “Hole mobility in thieno[3,2-b]thiophene oligomers”, Mendeleev Commun., 29:2 (2019), 218–219
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  • https://www.mathnet.ru/eng/mendc/v29/i2/p218
  • This publication is cited in the following 26 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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