N. M. Rubtsov, B. S. Seplyarskii, G. V. Bichurov, V. I. Chernysh, G. I. Tsvetkov, “Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method”, Mendeleev Commun., 19:1 (2009), 45

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Mendeleev Communications, 2009, Volume 19, Issue 1, Pages 45–46
DOI: https://doi.org/10.1016/j.mencom.2009.01.018 (Mi mendc3113)

This article is cited in 1 scientific paper (total in 1 paper)

Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method

N. M. Rubtsov^a, B. S. Seplyarskii^a, G. V. Bichurov^b, V. I. Chernysh^a, G. I. Tsvetkov^a

^a A.G. Merzhanov Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences, Chernogolovka, Moscow Region, Russian Federation
^b Samara State Technical University, Samara, Russian Federation

Full-text PDF (488 kB) Citations (1)

DOI: https://doi.org/10.1016/j.mencom.2009.01.018

Abstract: Both solid sodium azide and ammonium chloride react with volatile silicon-containing compounds under external initiation; in the reactions Si–N bond forms as evidenced by detecting the emission spectrum of SiN (C–A₂P) radicals.

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Document Type: Article

Language: English

Citation: N. M. Rubtsov, B. S. Seplyarskii, G. V. Bichurov, V. I. Chernysh, G. I. Tsvetkov, “Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method”, Mendeleev Commun., 19:1 (2009), 45–46

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This publication is cited in the following 1 articles:

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