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Mendeleev Communications, 2004, Volume 14, Issue 4, Pages 136–137
DOI: https://doi.org/10.1070/MC2004v014n04ABEH001950 (Mi mendc3842) 		 
Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0, 0.05 or 0.2) and BaF2 substrates

V. I. Shtanova, T. B. Shatalovaa, L. V. Yashinaa, R. Ts. Bondokovb, I. V. Sauninb

a Department of Chemistry, M.V. Lomonosov Moscow State University, Moscow, Russian Federation
b St. Petersburg Electrotechnical University 'LETI', St. Petersburg, Russian Federation
Full-text PDF (221 kB)
DOI: https://doi.org/10.1070/MC2004v014n04ABEH001950
Abstract: Phase composition, microstructure and orientation were investigated for GeTe films grown on BaF2 and Pb1 – xSnxTe (x = 0, 0.05 or 0.2) substrates by hot wall epitaxy.
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Document Type: Article
Language: English


Citation: V. I. Shtanov, T. B. Shatalova, L. V. Yashina, R. Ts. Bondokov, I. V. Saunin, “Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0, 0.05 or 0.2) and BaF2 substrates”, Mendeleev Commun., 14:4 (2004), 136–137
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