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Mendeleev Communications, 2025, Volume 35, Issue 6, Pages 688–691
DOI: https://doi.org/10.71267/mencom.7820
(Mi mendc7317)
 

Communications

Methodology for the radiation hardness assessment of organic semiconductors

P. M. Kuznetsova, T. N. Khokhlovaa, G. A. Kichiginaa, P. P. Kushcha, D. P. Kirukhina, P. A. Troshinba

a Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russian Federation
b Zhengzhou Research Institute, Harbin Institute of Technology, 450003 Zhengzhou, China
References:
Abstract: The first systematic study of the radiation hardness of a series of structurally similar conjugated polymers, model organic semiconductors, involves the set of numeric descriptors for quantitative benchmarking of their stability under exposure to the ionizing radiation. The conjugated polymers demonstrate surprisingly high radiation hardness and can tolerate huge doses of gamma rays up to 16 MGy much better than commodity types of plastic, which opens opportunities for their application in the development of radiation-tolerant organic electronics.
Keywords: organic semiconductors, organic electronics, radiation hardness, gamma rays, aerospace applications.
Funding agency Grant number
Russian Science Foundation 22-43-04427
Received: 12.05.2025
Accepted: 26.06.2025
Published: 21.10.2025
Document Type: Article
Language: English
Supplementary materials:
Supplementary_data_1.pdf (851.2 Kb)


Citation: P. M. Kuznetsov, T. N. Khokhlova, G. A. Kichigina, P. P. Kushch, D. P. Kirukhin, P. A. Troshin, “Methodology for the radiation hardness assessment of organic semiconductors”, Mendeleev Commun., 35:6 (2025), 688–691
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