Determination of the nonstationary radiation point defects distribution in crystal in the case of their annihilation on impurity atoms

The influence of annihilation sequence of vacancies $(\nu)$ and interstitial atoms $(i)$ on nonstationary distribution of impurity atoms has beeh analysed. The rate theory continuum model for sink strength of crystal surface for concentrations i and v has been used. The calculation of stiff nonlinear sets of the differential equations describing the kinetics of $i$ and $\nu$ concentrations during irradiation has been made. The comparison of i concentration profile calculated with the experimental data on irradiation of silicon crystal doped with impurity of carbon, oxygen, boron, and phosphorus has been carried out.