Optical bistability in semiconductors under the condition of finite time of absorpted light energy thermalization. I. Numerical methods. Bistability conditions

The interaction of laser radiation with a nonlinear absorpting semiconductor in the case of photogeneration, temperature dependence of the equilibrium charge carriers concentration, relaxation and bipolar diffusion of carriers, and heat conductivity is considered. Numerical methods for one-dimensional problems are proposed and prooved. The conditions of optical bistability and stability of stationary states are defined in the homogeneous approximation.