Theoretical study of polymer resist direct etching by heavy ions of average energy

Proposed paper is devoted to mathematical modeling of direct etching of polymer resists by heavy ion beam. Theoretical investigation is based on model developed in [10]. According this model the film's thickness degradation is caused by diffusion of radiation produced low-molecular-mass fragments and free volumes from film. The main advantage of model consists in the possibility to take into account surface displacement during irradiation. In addition to this model proposed work considers elastic collisions of ions and polymer target atoms. Thus description of etching by heavy ions became possible. Satisfactory agreement with experemental data was obtained. As a result some parameters of model were quantitativly estimated.