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Matematicheskoe modelirovanie, 1991, Volume 3, Number 8, Pages 63–71 (Mi mm2261)  
Computational methods and algorithms

Boundary layer method for semiconductor devices modelling

M. P. Belyanin, L. V. Kalachev, E. V. Mamontov

M. V. Lomonosov Moscow State University
Full-text PDF (853 kB)
Abstract: We consider 2-dimensional boundary value problem, modelling a steady state of a planar semiconductor device. We use the boundary layer technique for the asymptotic solution constracting, that can be apply for computer code.
Received: 20.08.1990
Bibliographic databases:
UDC: 517.958
Language: Russian
Citation: M. P. Belyanin, L. V. Kalachev, E. V. Mamontov, “Boundary layer method for semiconductor devices modelling”, Mat. Model., 3:8 (1991), 63–71
Citation in format AMSBIB
\Bibitem{BelKalMam91}
\by M.~P.~Belyanin, L.~V.~Kalachev, E.~V.~Mamontov
\paper Boundary layer method for semiconductor devices modelling
\jour Mat. Model.
\yr 1991
\vol 3
\issue 8
\pages 63--71
\mathnet{http://mi.mathnet.ru/mm2261}
\mathscinet{https://mathscinet.ams.org/mathscinet-getitem?mr=1157310}
\zmath{https://zbmath.org/?q=an:1189.78039}
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