N. V. Peskov, “A model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy”, Mat. Model., 2:7 (1990), 116

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Matematicheskoe modelirovanie, 1990, Volume 2, Number 7, Pages 116–128 (Mi mm2416)

Computational methods and algorithms

A model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy

N. V. Peskov

M. V. Lomonosov Moscow State University

Full-text PDF (1585 kB)

Abstract: A statistical model of molecular-beam epitaxial growth of GaAs is described. The model involves the processes of adsorption, migration, desorption of gallium, and dissociative adsorption, migration, associative desorption of arsenic. The Monte Carlo algorithm is described. The results of simulations are presented.

Received: 09.04.1990

Bibliographic databases:

Language: Russian

Citation: N. V. Peskov, “A model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy”, Mat. Model., 2:7 (1990), 116–128

Citation in format AMSBIB

\Bibitem{Pes90}

\by N.~V.~Peskov

\paper A~model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy

\jour Mat. Model.

\yr 1990

\vol 2

\issue 7

\pages 116--128

\mathnet{http://mi.mathnet.ru/mm2416}

\zmath{https://zbmath.org/?q=an:0974.82517}

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https://www.mathnet.ru/eng/mm2416

https://www.mathnet.ru/eng/mm/v2/i7/p116

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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