O. I. Kas'min, N. A. Bannov, “Strongly non-equilibrium electronic phenomena in sub-micron Si-MOS devices”, Mat. Model., 1:3 (1989), 61

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Matematicheskoe modelirovanie, 1989, Volume 1, Number 3, Pages 61–74 (Mi mm2529)

Computer experiment in science and engineering

Strongly non-equilibrium electronic phenomena in sub-micron Si-MOS devices

O. I. Kas'min, N. A. Bannov

Full-text PDF (1799 kB)

Received: 21.11.1988

Bibliographic databases:

UDC: 621.382

Language: Russian

Citation: O. I. Kas'min, N. A. Bannov, “Strongly non-equilibrium electronic phenomena in sub-micron Si-MOS devices”, Mat. Model., 1:3 (1989), 61–74

Citation in format AMSBIB

\Bibitem{KasBan89}

\by O.~I.~Kas'min, N.~A.~Bannov

\paper Strongly non-equilibrium electronic phenomena in sub-micron Si-MOS devices

\jour Mat. Model.

\yr 1989

\vol 1

\issue 3

\pages 61--74

\mathnet{http://mi.mathnet.ru/mm2529}

\zmath{https://zbmath.org/?q=an:0974.82514}

Linking options:

https://www.mathnet.ru/eng/mm2529

https://www.mathnet.ru/eng/mm/v1/i3/p61

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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