Influence of dissipative tunneling on the photodielectric effect associated with the excitation of impurity complexes $A^{+}+e$ in a quasi-zero-dimensional structure

Effect of tunneling decay for the quasi-stationary $A^{+}$-state, in an impurity complex A$^{+}+e$ (a hole, localized on a neutral acceptor, interacting with an electron, localized in the ground state of a quantum dot) on the photodielectric effect, associated with the excitation of impurity complexes $A^{+}+e$ in a quasi-zero-dimensional structure, has been studied in the zero-radius potential model in the one-instanton approximation. Calculation of the binding energy of a hole in an impurity complex $A^{+}+e$ was performed in the zero radius potential model in the adiabatic approximation. It is shown that as the probability of dissipative tunneling increases, the binding energy of a hole in a complex $A^{+}+e$ decreases, which is accompanied by an increase in the effective localization radius of the impurity complex and, accordingly, an increase in the magnitude of the photodielectric effect. The spectral dependence of the photodielectric effect has been calculated in the dipole approximation taking into account the dispersion of the quantum dot radius. A high sensitivity of the magnitude of the photodielectric effect to such parameters of dissipative tunneling as the frequency of the phonon mode, temperature, and coupling constant with the contact medium, has been revealed.