Investigation of the electron-phonon interaction in structures InAs/AlSb in quantization magnetic fields regime

Study of transverse magnetoresistance oscillations $\rho_{xx}$(B) were performed for InAs/AlSb samples with different doping level at temperatures T = (4$\div$28) K. Based on test of magnetic field dependence amplitude $\rho_{xx}$ (B) the formation dynamic of Landau quantization destruction was established. The components of the electron-electron and the electron-phonon interactions were marked out and the relaxation time $\tau_{q}$ ($\tau_{ee}$, $\tau_{e-ph}$) was evaluated. On the base of physical model of electron interaction the role of electron-phonon relaxation was revealed as a factor, which stabilizes the process of Landau quantization destruction. Experimental nonlinear dependence $\tau_{q}$ (T) is explained by electron scattering by piezoelectric and deformation potential of acoustic phonons and channels competition inter-(intra-) subband scattering. Parametric dependence of quantum relaxation time from the magnetic field $\tau_{q}$ $\varpropto$ B$^{-0.6}$ was established.