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Nanosystems: Physics, Chemistry, Mathematics, 2013, Volume 4, Issue 3, Pages 405–408
(Mi nano776)
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The effects of defects on electron transport in metallic single wall carbon nanotubes
S. Sivasathya, D. John Thiruvadigal Department of Physics and Nanotechnology, Centre for Material Sciences and Nanodevices, SRM University, Kattankulathur — 603203, Tamilnadu, India
Abstract:
We report the transport behavior of an openend metallic single wall carbon nanotube (SWCNT) with and without local structural defects using the nonequilibrium Green's functions approach together with the density functional theory (DFT). The transmission spectra and the projected density of states for the devices such as SWCNT (3, 3), (4, 4), (5, 5) and (6, 6) with and without defects were compared. In all cases, we found that the Stone–Wales defect had an almost negligible impact on the electrical performance compared to the monovacancy defect of the single wall carbon nanotubes at the Fermilevel. The Current–Voltage (I–V) characteristics of the devices were studied using the generalized
Landauer–Buttiker formalism under low bias conditions. From our results, we concluded that our systems were suitable for use in various CNT based nanoelectronic devices.
Keywords:
density functional theory, single wall carbon nanotubes, transport properties, I–V characteristics.
Citation:
S. Sivasathya, D. John Thiruvadigal, “The effects of defects on electron transport in metallic single wall carbon nanotubes”, Nanosystems: Physics, Chemistry, Mathematics, 4:3 (2013), 405–408
Linking options:
https://www.mathnet.ru/eng/nano776 https://www.mathnet.ru/eng/nano/v4/i3/p405
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| Abstract page: | 89 | | Full-text PDF : | 37 | | References: | 2 |
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