Nanosystems: Physics, Chemistry, Mathematics
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Nanosystems: Physics, Chemistry, Mathematics:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Nanosystems: Physics, Chemistry, Mathematics, 2013, Volume 4, Issue 3, Pages 405–408 (Mi nano776)  

The effects of defects on electron transport in metallic single wall carbon nanotubes

S. Sivasathya, D. John Thiruvadigal

Department of Physics and Nanotechnology, Centre for Material Sciences and Nanodevices, SRM University, Kattankulathur — 603203, Tamilnadu, India
Abstract: We report the transport behavior of an openend metallic single wall carbon nanotube (SWCNT) with and without local structural defects using the nonequilibrium Green's functions approach together with the density functional theory (DFT). The transmission spectra and the projected density of states for the devices such as SWCNT (3, 3), (4, 4), (5, 5) and (6, 6) with and without defects were compared. In all cases, we found that the Stone–Wales defect had an almost negligible impact on the electrical performance compared to the monovacancy defect of the single wall carbon nanotubes at the Fermilevel. The Current–Voltage (I–V) characteristics of the devices were studied using the generalized Landauer–Buttiker formalism under low bias conditions. From our results, we concluded that our systems were suitable for use in various CNT based nanoelectronic devices.
Keywords: density functional theory, single wall carbon nanotubes, transport properties, I–V characteristics.
Bibliographic databases:
Document Type: Article
PACS: 73.63Fg, 85.35Kt, 71.15Mb
Language: English
Citation: S. Sivasathya, D. John Thiruvadigal, “The effects of defects on electron transport in metallic single wall carbon nanotubes”, Nanosystems: Physics, Chemistry, Mathematics, 4:3 (2013), 405–408
Citation in format AMSBIB
\Bibitem{SivThi13}
\by S.~Sivasathya, D.~John~Thiruvadigal
\paper The effects of defects on electron transport in metallic single wall carbon nanotubes
\jour Nanosystems: Physics, Chemistry, Mathematics
\yr 2013
\vol 4
\issue 3
\pages 405--408
\mathnet{http://mi.mathnet.ru/nano776}
\elib{https://elibrary.ru/item.asp?id=19412868}
Linking options:
  • https://www.mathnet.ru/eng/nano776
  • https://www.mathnet.ru/eng/nano/v4/i3/p405
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Nanosystems: Physics, Chemistry, Mathematics
    Statistics & downloads:
    Abstract page:89
    Full-text PDF :37
    References:2
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025