Photodynamics of excitation transfer by charge carriers in a hybrid InP/InAsP/InP nanosystem

The results of processing the luminescence attenuation kinetics of an InP/InAsP/InP hybrid semiconductor nanostructure with deposited colloidal layers of CdSe/ZnS quantum dots (QD) under excitation at wavelengths of 532 and 633 nm and temperatures of 80 and 300 K. Such a nanostructure is characterized by a significant increase in the duration and intensity of the luminescence of the INASP nanostructure. The mechanism of increasing the luminescence duration is presumably associated with the interaction of the QD CdSe/ZnS-TORO colloid with the InP surface, which leads to the formation of new hybrid states in the band gap that are energetically close to the radiating state and are able to capture electrons, which in turn is compensated by the increasing role of the electron reverse transfer process, which leads to an increase in the duration of radiative recombination.