Two-wave method of laser-stimulated oxidation of the porous silicon layer

A new method of photon-stimulated surface treatment of a semiconductor is described the method of two- spectral laser-stimulated oxidation of a layer of porous silicon. The results of studying the optical properties of a layer of laser-oxidized nanoporous silicon in a spectral band are presented. The initial layer of nanoporous silicon was obtained by electrolytic etching of the surface of the single-crystal silicon KDB-10 (100) according to generally accepted method. The density of anode etching was 25.0 mA/cm$^2$. A laser-stimulated oxidation of a nanoporous silicon layer was carried out using two laser radiation lengths of unequal intensity at a fundamental wavelength of 1.064 $\mu$m using a DPSS YAG: Nd laser operating in a pulsed mode. The laser wavelengths for the photon-stimulated assay mode was 980 nm, 520 nm, and 405 nm.