Dependence of photoluminescence on the annealing temperature of polycrystalline ZnO:Te/Si(111) layers

Polycrystalline ZnO:Te/Si(111) films were obtained by gas-phase epitaxy in hydrogen in a low-pressure flow reactor. The properties of ZnO:Te/Si(111) films were studied using photoluminescence, X-ray diffraction and atomic force microscopy. Photoluminescence measurements have shown that the entire range of the visible part of the spectrum is observed in the emission spectrum of ZnO:Te/Si(111) films. A study of the spectrum of ZnO:Te/Si(111) films at 77 K shows that the luminescence is shifting to the red region. Annealing of films at different temperatures (300–500)$^\circ$C leads to a general decrease in intensity and to a shift of radiation to the long-wavelength region of the spectrum.