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Optics of low-dimensional structures, mesostructures, and metamaterials
X-ray luminescent properties of zinc oxide films on the sapphire M and A-plane
I. D. Venevtseva, A. È. Muslimovb, A. P. Tarasovb, L. L. Emiraslanovac, A. M. Ismailovc, V. M. Kanevskiib a Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
b Shubnikov Institute of Crystallography FSRC "Crystallography and Photonics" Russian Academy of Sciences, Moscow, Russia
c Daghestan State University, Makhachkala, Dagestan Republic, Russia
Abstract:
The results of comparative studies of the processes of high-temperature synthesis, luminescence and scintillation characteristics of ZnO films on M(100)- and A(110)-orientation sapphire substrates are presented. It is shown that the use of the magnetron deposition method makes it possible to form, against the background of a continuous film, ensembles of individual [001] ZnO microcrystals with pronounced X-ray luminescent properties. The X-ray luminescence kinetics is characterized by two components: a fast component with a decay time in the order of a nanosecond and a slow luminescence component. The study of the films by photoluminescence spectroscopy revealed the features of the near-band-edge luminescence spectra of the samples, in particular, the presence of various excitonic emission channels. Differences in the spectral parameters of the near-band-edge luminescence band in the case of optical and X-ray excitation are found and interpreted.
Keywords:
films, microcrystals, zinc oxide, X-ray luminescence, photoluminescence, excitonic emission.
Received: 20.06.2022 Revised: 19.07.2022 Accepted: 05.09.2022
Citation:
I. D. Venevtsev, A. È. Muslimov, A. P. Tarasov, L. L. Emiraslanova, A. M. Ismailov, V. M. Kanevskii, “X-ray luminescent properties of zinc oxide films on the sapphire M and A-plane”, Optics and Spectroscopy, 130:11 (2022), 1723–1730
Linking options:
https://www.mathnet.ru/eng/os1878 https://www.mathnet.ru/eng/os/v130/i11/p1723
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