Electroluminescence of Ta$_{2}$O$_{5}$ films formed by molecular layer deposition

The work shows the possibility of using electroluminescence to study the structures of Si–Ta$_{2}$O$_{5}$ и Si–SiO$_{2}$–Ta$_{2}$O$_{5}$ and Si–SiO$_{2}$–Ta$_{2}$O$_{5}$ and to obtain the information about the electronic structure of the Ta2O5 layer and the properties of the SiO$_{2}$–Ta$_{2}$O$_{5}$ boundary. A model of the electronic structure of the Ta$_{2}$O$_{5}$ layer obtained by molecular layering (atomic layer deposition) is proposed to explain the type of spectral distribution of luminescence regardless of the method of its excitation. It is shown that the formation of a Ta$_{2}$O$_{5}$ layer on the surface of thermally oxidized silicon is accompanied by transformation of the near-surface region of SiO$_2$ and quenching of the luminescence band in the spectral region of 650 nm.