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Publications in Math-Net.Ru |
Citations |
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2014 |
| 1. |
L. F. Makarenko, F. P. Korshunov, S. B. Lastovsky, L. I. Murin, M. Moll, I. Pintilie, “Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in $n$- and $p$-type silicon”, Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1492–1498   ; Semiconductors, 48:11 (2014), 1456–1462 |
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1992 |
| 2. |
F. P. Korshunov, V. P. Markevich, I. F. Medvedeva, L. I. Murin, “On the acceptor levels of divacancy in silicon”, Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 2006–2010 |
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1987 |
| 3. |
A. S. Kamyshan, F. F. Komarov, F. P. Korshunov, A. P. Lazar, “Experimental investigation of X-ray radiation spectra under fast electron channeling in silicon”, Dokl. Akad. Nauk SSSR, 294:2 (1987), 339–342 |
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