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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Transition from an exponential to a linear increase of the energy density of the spectral component of picosecond stimulated GaAs emission upon gain saturation”, Fizika i Tekhnika Poluprovodnikov, 56:4 (2022), 394–400   |
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| 2. |
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Functional dependences of the maximum energy density of the spectral component of stimulated picosecond GaAs emission at gain saturation. Residual characteristic relaxation time of emission”, Fizika i Tekhnika Poluprovodnikov, 56:3 (2022), 307–314 |
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2021 |
| 3. |
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Effect of carrier heating by intrinsic stimulated picosecond emission in GaAs on a linear increase at the front and the duration of the spectral component of this emission”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 434–440 ; Semiconductors, 55:5 (2021), 476–481 |
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N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Amplification lengths of spectral components of intrinsic stimulated picosecond emission. Dependence of the characteristic relaxation time of these components on their amplification lengths. Relation between stimulated and spontaneous emission spectra in GaAs”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 121–126 ; Semiconductors, 55:2 (2021), 162–167 |
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N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Effect of carrier heating by the GaAs picosecond stimulated emission on duration of emission”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 113–120 ; Semiconductors, 55:2 (2021), 154–161 |
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2020 |
| 6. |
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Electron-population Bragg grating induced in an Al$_{x}$Ga$_{1-x}$As–GaAs–Al$_{x}$Ga$_{1-x}$As heterostructure by intrinsic stimulated picosecond emission”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1018–1028 ; Semiconductors, 54:10 (2020), 1205–1214 |
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N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Anticorrelation between the intensity of stimulated picosecond emission in GaAs and the characteristic time of charge-carrier cooling”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 25–30 ; Semiconductors, 54:1 (2020), 22–27 |
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2019 |
| 8. |
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Relation between the relaxation of intrinsic stimulated picosecond emission from GaAs with a characteristic charge-carrier cooling time”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1471–1478 ; Semiconductors, 53:11 (2019), 1431–1438 |
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2017 |
| 9. |
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 594–599 ; Semiconductors, 51:5 (2017), 565–570 |
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2016 |
| 10. |
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emission”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1333–1342 ; Semiconductors, 50:10 (2016), 1312–1321 |
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2012 |
| 11. |
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Changes in the spectra of picosecond stimulated emission from GaAs accompanied by signs of electron-phonon interaction”, Fizika i Tekhnika Poluprovodnikov, 46:7 (2012), 944–951 ; Semiconductors, 46:7 (2012), 921–928 |
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