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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. A. Semakova, A. M. Smirnov, N. L. Bazhenov, K. J. Mynbaev, A. A. Pivovarova, A. V. Chernyaev, S. S. Kizhaev, N. D. Stoyanov, “Spectral and electrical properties of led heterostructures with InAs-based active layer”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 682–687   |
| 2. |
A. A. Semakova, N. L. Bazhenov, K. J. Mynbaev, A. V. Chernyaev, S. S. Kizhaev, N. D. Stoyanov, “Study of the current–voltage characteristics of InAsSb-based LED heterostructures in the 4.2–300 K temperature range”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 502–506 ; Semiconductors, 55:6 (2021), 557–561 |
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2020 |
| 3. |
A. A. Semakova, S. N. Lipnitskaya, K. J. Mynbaev, N. L. Bazhenov, S. S. Kizhaev, A. V. Chernyaev, N. D. Stoyanov, H. Lipsanen, “Experimental study and simulation of the spectral characteristics of LED heterostructures with an inas active region”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020), 51–54 ; Tech. Phys. Lett., 46:2 (2020), 150–153 |
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2017 |
| 4. |
K. J. Mynbaev, N. L. Bazhenov, A. A. Semakova, M. P. Mikhailova, N. D. Stoyanov, S. S. Kizhaev, S. S. Molchanov, A. P. Astakhova, A. V. Chernyaev, H. Lipsanen, V. E. Bugrov, “Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 247–252 ; Semiconductors, 51:2 (2017), 239–244 |
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2013 |
| 5. |
A. A. Petukhov, B. E. Zhurtanov, K. V. Kalinina, N. D. Stoyanov, Kh. M. Salikhov, M. P. Mikhailova, Yu. P. Yakovlev, “High-temperature luminescence in an $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb light-emitting heterostructure with a high potential barrier”, Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1270–1275 ; Semiconductors, 47:9 (2013), 1258–1263 |
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| 6. |
K. V. Kalinina, M. P. Mikhailova, B. E. Zhurtanov, N. D. Stoyanov, Yu. P. Yakovlev, “Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 75–82 ; Semiconductors, 47:1 (2013), 73–80 |
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2012 |
| 7. |
A. A. Petukhov, S. S. Kizhaev, S. S. Molchanov, N. D. Stoyanov, Yu. P. Yakovlev, “Electrical and electroluminescent properties of InAsSb-Based LEDs ($\lambda$ = 3.85–3.95 $\mu$m) in the temperature interval 20–200$^\circ$C”, Zhurnal Tekhnicheskoi Fiziki, 82:1 (2012), 73–76 ; Tech. Phys., 57:1 (2012), 69–73 |
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2011 |
| 8. |
A. A. Petukhov, B. E. Zhurtanov, S. S. Molchanov, N. D. Stoyanov, Yu. P. Yakovlev, “Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures”, Zhurnal Tekhnicheskoi Fiziki, 81:4 (2011), 91–96 ; Tech. Phys., 56:4 (2011), 520–525 |
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